s s 3212 cmos omnipolar high sen sitivity micropower hall switch 1 v 3.1 0 nov 1 , 20 1 3 features ? micropower consumption for battery powered applications ? omnipolar, output switches with absolute value of north or south pole from magnet ? operation down to 2.5v ? high sensitivity for direct reed switch replacement applications 3 pin sot23 (suffix so) 3 pin sip (suffix ua) general d escription the s s3212 omnipolar hall effect sensor ic is fabricated from mixed signal cmos technology .it incorporates advanced chopper - stabilization techniques to provide accurate and stable magnetic switch points. the circuit design provides an internally controlled clocking mechanism to cycle power to the hall element and analog signal processing circuits. this serves to place the high current - consuming portions of the circuit into a ?sleep? mode. periodically the device is ?awakened? by this internal logic and the magnetic flux from the hall element is evaluated a gainst the predefined thresholds. if the flux density is above or below the bop/brp thres h- olds then the output transistor i s driven to change states accordingly. while in the ?sleep? cycle t he output tra n- sistor is latched in its previous state. the design has been optimized for service in applications requiring extended operating lifetime in battery powered systems. the output transistor of the s s3212 will be latched on (b op ) in the presence of a sufficiently strong south or north magnetic field facing the marked side of the package. the output will be latched off (b rp ) in the absence of a magnetic field. a pplications ? solid state switch ? handheld wireless handset awake switch ? lid close sensor for battery powered devices ? magnet proximity sensor for reed switch replacement in low duty cycle applications
s s 3212 cmos omnipolar high sen sitivity micropower hall switch 2 v 3.1 0 nov 1 , 20 1 3 t ypical a pplication c ircuit sec 's pole - independent sensing technique allows for operation with either a north pole or south pole ma g- net orientation, enhancing the manufacturability of the device. the state - of - the - art technology provides the same o utput polarity for either pole face. it is strongly recommended that an external bypass capacitor be connected (in close proximity to the hall sensor) between the supply and ground of the device to reduce both external noise and noise generated by the chop per - stabilization technique. this is especially true due to the relatively high impedance of battery supplies. f unctional block diagram v dd out sleep/awake logic chopper hall plate gnd
s s 3212 cmos omnipolar high sen sitivity micropower hall switch 3 v 3.1 0 nov 1 , 20 1 3 pin s definition and description internal timing circuit sot p i n sip pi n na m e t y pe f unc t i on 1 1 v dd s upply s upply v oltage pin 2 3 out output open d r ain output pin 3 2 gnd g r ound g r ound pin awake taw:175 s period sleep tsl:70ms time current 0 i s p i aw i av sample & ou t- put latched
s s 3212 cmos omnipolar high sen sitivity micropower hall switch 4 v 3.1 0 nov 1 , 20 1 3 a bsolute m aximum ratings parameter symbol va l ue units supply voltage(operating) v dd 6 v supply current i dd 5 ma output voltage v out 6 v output curent i out 5 ma operating temperature range t a - 40 to 85 c storage temperature rang t s - 50 to 150 c esd sensitivity - 4000 v exceeding the absolute maximum ratings may cause permanent damage. exposure to absolute - maximum rated conditions for e x- tended periods may affect device reliability. dc electrical c haracteristics dc operating p arameters: t a = 25 c , v dd =2.75v. p arameter symbol t est c onditions m in t yp m ax u nits operating voltage v dd operating 2.5 3 5.5 v supply current i dd average 5 a output current i out 1.0 ma saturation voltage v s at i out =1ma 0.4 v awake mode time t aw operating 175 s sleep mode time t sl operating 70 ms m agnetic c haracteristics o perating p arameters: t a = 25 c , v dd =2.75v dc . parameter symbol min type max units operating point b op - +/ - 35 +/ - 60 gs release point b rp +/ - 5 +/ - 21 - gs magnetic flux(gauss) on b ops b rps b opn b rpn off output voltage( v ) 0 40 20 60 80 - 60 - 80 - 40 - 20 3.0 2.0 1.5 1.0 0.5 0 2.5
s s 3212 cmos omnipolar high sen sitivity micropower hall switch 5 v 3.1 0 nov 1 , 20 1 3 hysteresis b hys - 14 - gs esd protection human body model (hbm) tests according to: mil. std. 883f method 3015.7 parameter symbol limit values unit notes min max esd voltage v esd 4 kv unique features cmos hall ic technology the chopper stabilized amplifier uses switched capacitor techniques to eliminate the amplifier offset voltage, which, in bipolar devices, is a major source of temperature sensitive drift. cmos makes this advanced technique possible. the cmos chip is also much smaller than a bipolar chip, allowing very sophisticated circuitry to be placed in less space. the small chip size also contributes to lower physical stress and less power consumption. installation comments consider temperature coefficients of hall ic and magnetics , as well as air gap and life time variations. observe temperature limits during wave soldering. typical ir solder - reflow profile: ? no rapid heating and cooling. ? recommended preheating for max. 2minutes at 150 c ? recommended reflowing for max. 5seconds at 2 40 c esd precautions electronic semiconductor products are sensitive to electro static discharge (esd). always observe electro static discharge control procedures whenever handling s emiconductor products.
s s 3212 cmos omnipolar high sen sitivity micropower hall switch 6 v 3.1 0 nov 1 , 20 1 3 p erformance c haracteristics
s s 3212 cmos omnipolar high sen sitivity micropower hall switch 7 v 3.1 0 nov 1 , 20 1 3 package information package sot , 3- pin sot - 23: sot - 23 package hall location 0.56 0.66 0.95 0.80 1.50 1.40 chip 3 2 1 bottom view of sot - 23 package 2.70 3.10 1.00 1.30 0.70 0.90 0.00 0.10 0.35 0.50 0.10 0.25 0.20 m in 2.60 3.00 1.50 1.8 0 1.70 2.10 3 2 1 top view side view end v iew notes 1). pinout: pin 1 v dd pin 2 output pin 3 gnd 2). all dimensions are in millimeters;
s s 3212 cmos omnipolar high sen sitivity micropower hall switch 8 v 3.1 0 nov 1 , 20 1 3 package ua, 3 - pin sip: ordering information part no. pb - free temperature code package code packing SS3212ESOT yes - 40c to 85c sot - 23 7- in. reel, 3000 pieces/reel ss3212eua yes - 40c to 85c to - 92 bulk, 1000 pieces/bag ss3212ksot yes - 40c to 12 5c sot - 23 7- in. reel, 3000 pieces/reel ss3212kua yes - 40c to 12 5c to - 92 bulk, 1000 pieces/bag s s3212 l sot yes - 40c to 150 c sot - 23 7- in. reel, 3000 pieces/reel s s3212 l ua yes - 40c to 150 c to - 92 bulk, 1000 pieces/bag 4.0 0.01 1 2 3 1.27 2.13 1.87 1.00 1.20 45 1 1.52 0.1 3 1 0.75 0.05 3.0 0.01 0.44 0.01 0.05 0.05 1.6. 0.1 0.84(nom) 3 1 6 1 6 1 3 1 14 .5 1 active area depth: sensor location 1 2 3 notes: 1). controlling dimension : mm ; 2). le a ds must be free of flash and plating voids ; 3). do not bend leads within 1 mm of lead to package interface ; 4). pinout: pin 1 v dd pin 2 gnd pin 3 output 0.39 0.01 0.38 0.01 2.54
|
